{"id":"nanosheet-gate-last-integration","level":"transistor","name":"Nanosheet release and replacement gates","shortName":"Nanosheet release and replacement gates","role":"Creates channels that can be surrounded by a gate after sacrificial materials are removed.","description":"A stacked nanosheet transistor begins with layers that have different jobs. Some become channels; others provide temporary spacing and can later be removed selectively. A representative replacement-gate route uses a temporary gate while spacers and source/drain structures are formed. After opening the gate region, a selective release exposes channel surfaces so a dielectric and metal gate can surround them. Inner spacers help separate the gate from source/drain regions. Every operation must preserve thin channels and compatible interfaces. The animation labels retained and sacrificial materials throughout, making it clear that the final empty spaces were engineered into the starting stack.","specs":[{"label":"Material roles","value":"Retained channel vs sacrificial layer","context":"Color denotes function; no universal layer thickness is implied."},{"label":"Gate access","value":"Surrounding released channel surfaces","context":"Conformal film access and selective removal are distinct requirements."}],"interfaces":[{"name":"Alternating epitaxial stack","direction":"in","signal":"Designed channel and sacrificial layers"},{"name":"Completed gate-all-around region","direction":"out","signal":"Supported channels with dielectric and metal surrounding them"}],"tradeoff":"More channels can increase drive per footprint but complicate release, gate fill, parasitics and thermal/process control.","whyAI":"Gate-all-around integration is one route for sustaining logic density and electrostatic control as devices become harder to scale.","related":["gaa","epitaxial-material-stack","ald-self-limiting-growth","source-drain-contact-integration"],"sources":[{"title":"Applied Materials — New Ways to Shrink","url":"https://ir.appliedmaterials.com/static-files/f2fbf48d-a761-4c4f-ab4c-73f312ab1ebc"},{"title":"imec — CMOS scaling","url":"https://www.imec-int.com/en/expertise/cmos-advanced/compute/cmos-scaling"},{"title":"IBM Research — Stacked nanosheet gate-all-around transistor","url":"https://research.ibm.com/publications/stacked-nanosheet-gate-all-around-transistor-to-enable-scaling-beyond-finfet"},{"title":"Intel — High-k and metal-gate transistor announcement","url":"https://www.intel.com/pressroom/archive/releases/2007/20070128comp.htm"}],"scale":"Nanometer device cross-sections; reference flow with alternatives","kind":"process","branch":"Fabrication / FEOL and MOL","subbranch":"Integrating the transistor","mechanism":["Grow and pattern an alternating stack whose material contrast supports later selective removal.","Use a temporary gate and spacers to establish the region for subsequent replacement.","Form source/drain and inner-spacer features while maintaining channel support and isolation.","Remove temporary gate material and selectively release sacrificial layers without unacceptable channel loss.","Deposit gate dielectric and conductors around the accessible channels, then inspect fill and electrical behavior."],"misconception":"Channels are not individually placed into the final gate cavity like loose mechanical shelves.","check":{"question":"Why is selective removal central to a nanosheet replacement-gate route?","options":["It replaces all testing","It exposes retained channel surfaces without removing the channels","It removes every semiconductor layer"],"answer":1,"explanation":"The alternating stack provides material contrast so the temporary spacing layers can be removed while useful channels remain."},"science":[{"title":"Channel-loss budget","equation":"Δt_channel ≈ h_removed / S","explanation":"h_removed is a representative sacrificial removal distance and S the sacrificial-to-channel etch selectivity; lengths match.","assumptions":"A simplified selectivity budget. Three-dimensional transport, crystal surfaces, nonuniformity and overetch make actual release more complex."}],"prerequisites":["gaa","epitaxial-material-stack","plasma-wet-etch-transfer"],"learningObjective":"Trace retained and sacrificial materials through a representative gate-last nanosheet sequence.","workstream":"W03","visualFamily":"device-crosssection","engineeringExample":"Synthetic budget: 20 nm equivalent sacrificial removal at selectivity 100 predicts 0.2 nm channel loss before nonuniformity and overetch. At atomic-scale channel dimensions, even that estimate is consequential.","evidenceNotes":"Applied Materials describes representative operations; the atlas does not claim a complete foundry recipe. The selectivity example is synthetic.","labId":"library","scope":"Use the manufacturing investigation to trace compatible inputs, assembly and operating constraints; no current standalone calculator models this lesson’s full mechanism.","investigationId":"manufacturing","labScope":"Use the manufacturing investigation to trace compatible inputs, assembly and operating constraints; no current standalone calculator models this lesson’s full mechanism."}